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10pcs IRFZ46N IRFZ46 Power MOSFET Transistor HEXFET 53A 55V Fast Switching IR

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Business & Industrial:Electrical Equipment & Supplies:Electronic Components & Semiconductors:Semiconductors & Actives:Transistors
Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 88 W Maximum Drain-Source Voltage |Vds|: 55 V Maximum Gate-Source Voltage |Vgs|: 10 V Maximum Drain ...
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Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 88 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 46 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 48 nC
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: TO-220

- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Fully Avalanche Rated
VDSS = 55V
RDS(on) = 16.5mΩ
ID = 53A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
Package Included:
10pcs IRFZ46N 53A 55V Fast Switching Power MOSFET Transistor HEXFET

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